Experimental Demonstration of Room-Temperature Spin Transport in n-Type Germanium Epilayers.

Title Experimental Demonstration of Room-Temperature Spin Transport in n-Type Germanium Epilayers

Spin polarization and electronic structure of ferromagnetic Mn5Ge3 epilayers

Semiconductor spintronics has recently been recognized for its potential to combine the spin selectivity and nonvolatility of ferromagnetic compounds with the ability to fabricate hybrid thin-film devices naturally integrated with conventional semiconductors [1]. Yet in order to succeed in technological applications one has to be able to introduce roomtemperature spin-polarized materials that a...

Current-induced polarization and the spin Hall effect at room temperature.

Electrically induced electron spin polarization is imaged in n-type ZnSe epilayers using Kerr rotation spectroscopy. Despite no evidence for an electrically induced internal magnetic field, current-induced in-plane spin polarization is observed with characteristic spin lifetimes that decrease with doping density. The spin Hall effect is also observed, indicated by an electrically induced out-of...

Tunability and Losses of Mid-infrared Plasmonics in Heavily Doped Germanium Thin Films

Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the 10 to 10 cm range, by infrared spectroscopy, first principle cal...

Spin Polarized Transport in Core Shell Nanowire of Silicon and Germanium

We investigate spin polarized electron transport in ultra-thin Si-Core/Ge-Shell and GeCore/Si-Shell nanowire system using semi-classical Monte Carlo simulation method. Depolarization of electron’s spin occurs in nanowire mainly due to D’yakonov-Perel dephasing (DP-mechanism) and Elliott-Yafet dephasing (EY-mechanism). We studied the dependence of spin dephasing on ultra-thin silicon core diamet...